1.1 ,This test method covers the measurement of steady-state primary photocurrent, I_pp, generated in semiconductor devices when these devices are exposed to ionizing radiation. These procedures are intended for the measurement of photocurrents greater than 10^−,9 A·,s/Gy(Si or Ge), in cases for which the relaxation time of the device being measured is less than 25 ,% of the pulse width of the ionizing source. The validity of these procedures for ionizing dose rates as great as 10⁸Gy(Si or Ge)/s has been established. The procedures may be used for measurements at dose rates as great as 10¹⁰Gy(Si or Ge)/s, however, extra care must be taken. Above 10⁸Gy/s, the package response may dominate the device response for any device. Additional precautions are also required when measuring photocurrents of 10^−,9 A·,s/Gy(Si or Ge) or lower.